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| DATA SHEET MOS FIELD EFFECT TRANSISTOR PA672T N-CHANNEL MOS FET ARRAY FOR SWITCHING The PA672T is a super-mini-mold device provided with two MOS FET elements. It achieves high-density mounting and saves mounting costs. PACKAGE DIMENSIONS (in millimeters) 0.2 -0 +0.1 0.15 -0.05 +0.1 FEATURES * Two MOS FET circuits in package the same size as SC-70 * Automatic mounting supported 1.25 0.1 2.1 0.1 6 5 4 0 to 0.1 1 2 3 0.7 0.9 0.1 0.65 0.65 1.3 2.0 0.2 PIN CONNECTION 6 5 4 1 2 3 1. Source 1 (S1) 2. Gate 1 (G1) 3. Drain 2 (D2) 4. Source 2 (S2) 5. Gate 2 (G2) 6. Drain 1 (D1) Marking: MA ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Total Power Dissipation Channel Temperature Storage Temperature SYMBOL VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg PW 10 ms, Duty Cycle 50 % TEST CONDITIONS RATINGS 50 7.0 100 200 200 (Total) 150 -55 to +150 UNIT V V mA mA mW C C Document No. G11259EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan (c) 1996 PA672T ELECTRICAL CHARACTERISTICS (TA = 25 C) PARAMETER Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-State Resistance Drain to Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SYMBOL IDSS IGSS VGS(off) |yfs| RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf VDD = 3 V, ID = 20 mA, VGS(on) = 3 V, RG = 10 , RL = 120 TEST CONDITIONS VDS = 50 V, VGS = 0 VGS = 7.0 V, VDS = 0 VDS = 3.0 V, ID = 1.0 A VDS = 3.0 V, ID = 10 mA VGS = 2.5 V, ID = 10 mA VGS = 4.0 V, ID = 10 mA VDS = 3.0 V, VGS = 0, f = 1.0 MHz 0.7 20 20 15 6 8 1.2 9 50 20 40 40 20 1.0 MIN. TYP. MAX. 10 5.0 1.5 UNIT A A V mS pF pF pF ns ns ns ns SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS VGS DUT RL Gate voltage waveform 10 % VGS(on) 90 % 0 VDD RG PG. Drain current waveform VGS 0 = 1s Duty Cycle 1 % 0 10 % ID 90 % 90 % ID 10 % td(on) ton tr td(off) toff tf 2 PA672T TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 300 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 PT - Total Power Dissipation - mW Free air 250 80 ID - Drain Current - mA 4.0 V 3.5 V 3.0 V 200 60 2.5 V 150 Pe ro ne 100 un To ta it l 40 50 20 VGS = 2.0 V 0 50 75 100 125 25 TA - Ambient Temperature - C 150 0 1 2 3 4 VDS - Drain to Source Voltage - V 5 TRANSFER CHARACTERISTICS 100 |yfs| - Forward Transfer Admittance - mS VDS = 3 V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 VDS = 3 V 10 ID - Drain Current - mA TA = -25 C 50 25 C 1 TA = 75 C 25 C -25 C 125 C 0.1 20 0.01 0.001 0 1 2 3 VGS - Gate to Source Voltage - V 0 1 2 5 10 20 ID - Drain Current - mA 50 100 RDS(on) - Drain to Source On-State Resistance - 100 50 RDS(on) - Drain to Source On-State Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS = 2.5 V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 VGS = 4 V 50 20 10 5 TA = 75 C 25 C -25 C 20 10 5 TA = 75 C 25 C -25 C 2 1 1 2 5 10 20 ID - Drain Current - mA 50 100 2 1 1 2 5 10 20 ID - Drain Current - mA 50 100 3 PA672T DRAIN TO SOURCE ON-STAGE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 ID = 10 mA RDS(on) - Drain to Source On-State Resistance - CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 Ciss, Coss, Crss, - Capacitance - pF 5 Ciss Coss 20 ID = 1 mA 10 mA 50 mA 2 1 0.5 Crss 10 0.2 0.1 VGS = 0 f = 1 MHz 1 2 3 4 5 6 VGS - Gate to Source Voltage - V 7 1 2 5 10 20 50 VDS - Drain to Source Voltage - V 100 SWITCHING CHARACTERISTICS 100 100 tr SOURCE TO DRAIN DIODE FORWARD VOLTAGE td(on), tr, td(off), tr - Switching Time - ns 50 tf 20 td(off) ISD - Source to Drain Current - mA 10 5 td(on) 10 2 1 1 20 VDD = 3 V VGS(on) = 3 V RG = 10 1 0 0.2 0.4 0.6 0.8 1.0 VSD - Source to Drain Voltage - V 50 100 200 ID - Drain Current - mA 500 1000 4 PA672T REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Document No. TEI-1202 IEI-1209 C10535E MEI-1202 X10679E 5 PA672T No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 |
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